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CP611_10 PDF预览

CP611_10

更新时间: 2024-09-30 09:30:11
品牌 Logo 应用领域
CENTRAL 晶体开关放大器晶体管
页数 文件大小 规格书
2页 394K
描述
Power Transistor PNP - Amp/Switch Transistor Chip

CP611_10 数据手册

 浏览型号CP611_10的Datasheet PDF文件第2页 
PROCESS CP611  
Power Transistor  
PNP - Amp/Switch Transistor Chip  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
80 x 99 MILS  
12.5 1 MILS  
12 x 32 MILS  
13 x 46 MILS  
Al - 30,000Å  
Die Size  
Die Thickness  
Base Bonding Pad Area  
Emitter Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
Ag - 16,000Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
1,300  
PRINCIPAL DEVICE TYPES  
CJD42C  
TIP42C  
BACKSIDE COLLECTOR  
R5 (22-March 2010)  
www.centralsemi.com  

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