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CP611-2N6107 PDF预览

CP611-2N6107

更新时间: 2024-11-18 14:55:19
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CENTRAL /
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5页 627K
描述
70V,7A,40W Bare die,99.000 X 80.000 mils,Transistor-Bipolar Power (>1A)

CP611-2N6107 数据手册

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CP611-2N6107  
PNP - High Current Transistor Die  
6.0 Amp, 70 Volt  
www.centralsemi.com  
The CP611-2N6107 is a silicon PNP transistor designed for and high current applications.  
MECHANICAL SPECIFICATIONS:  
Die Size  
80 x 99 MILS  
12.5 1.0 MILS  
12 x 32 MILS  
13 x 46 MILS  
Al – 50,000Å  
Die Thickness  
Base Bonding Pad Size  
Emitter Bonding Pad Size  
Top Side Metalization  
Back Side Metalization  
Scribe Alley Width  
Wafer Diameter  
Cr/Ni/Ag – 1,000Å/5,000Å/10,000Å  
6.5 MILS  
4 INCHES  
Gross Die Per Wafer  
1,450  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL  
UNITS  
V
A
V
80  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
70  
5.0  
V
V
CEV  
EBO  
V
Continuous Collector Current  
Peak Collector Current  
I
7.0  
A
C
I
10  
A
CM  
Continuous Base Current  
Operating and Storage Junction Temperature  
I
3.0  
A
B
T , T  
-65 to +150  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=70V, V =1.5V  
100  
μA  
CEV  
CEO  
EBO  
CE  
CE  
EB  
EB  
=60V  
1.0  
1.0  
mA  
mA  
V
=5.0V  
BV  
I =100mA  
70  
CEO  
CE(SAT)  
BE(ON)  
FE  
C
V
V
I =7.0A, I =3.0A  
3.5  
3.0  
150  
V
C
B
V
=4.0V, I =7.0A  
V
CE  
CE  
CE  
CE  
CE  
CB  
C
h
h
h
V
V
V
V
V
=4.0V, I =2.0A  
30  
2.3  
20  
C
=4.0V, I =7.0A  
FE  
C
=4.0V, I =0.5A, f=50kHz  
fe  
C
f
=4.0V, I =0.5A, f=1.0MHz  
4.0  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
250  
ob  
E
R1 (9-June 2017)  

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