CMUT5179TR

更新时间： 2024-09-16 13:06:59

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CENTRAL		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
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2页	110K
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CMUT5179TR 数据手册

CMUT5179

Central

Semiconductor Corp.

ULTRAmini™

SURFACE MOUNT

NPN SILICON

DESCRIPTION:

RF TRANSISTOR

The CENTRAL SEMICONDUCTOR CMUT5179

type is an NPN silicon RF transistor

manufactured by the epitaxial planar process,

epoxy molded in an ULTRAmini™ surface mount

package, designed for low noise, high frequency

amplifier and high output oscillator applications.

Marking code is HC7.

SOT-523 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

2.5

CBO

CEO

EBO

Power Dissipation

250

Operating and Storage

Junction Temperature

T ,T

stg

-65 to +150

500

°C

°C/W

Thermal Resistance

ELECTRICAL CHARACTERISTICS:

(T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

=15V

MIN

TYP

MAX

UNITS

CBO

CEO

I =10µA

2.5

I =3.0mA

I =10µA

EBO

I =10mA, I =1.0mA

0.4

1.0

CE(SAT)

BE(SAT)

I =10mA, I =1.0mA

=1.0V, I =3.0mA

900

=6.0V, I =5.0mA, f=100MHz

1450

MHz

=10V, I =0, f=0.1 to 1.0MHz

1.0

=6.0V, I =2.0, f=1.0kHz

=6.0V, I =5.0mA, f=200MHz

4.5

=6.0V, I =1.5mA, R =50Ω, f=200MHz

R0 ( 15-August 2001)

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