Datasheet > CMUT5551_10

CMUT5551_10

更新时间： 2024-09-16 09:27:59

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	343K
描述
SURFACE MOUNT NPN SILICON TRANSISTOR

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中文翻译

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CMUT5551_10 数据手册

CMUT5551

www.centralsemi.com

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMUT5551 type

is an NPN silicon transistor manufactured by the

epitaxial planar process, epoxy molded in a surface

mount package, designed for high voltage amplifier

applications.

MARKING CODE: 55C

SOT-523 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

180

160

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Continuous Collector Current

Power Dissipation

600

°C

250

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

500

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=120V

μA

CBO

=120V, T =100°C

CBO

I =100μA

180

160

6.0

CBO

CEO

I =1.0mA

I =10μA

EBO

I =10mA, I =1.0mA

0.15

0.20

1.00

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

=5.0V, I =10mA

250

=5.0V, I =50mA

=10V, I =10mA, f=100MHz

100

300

6.0

MHz

=10V, I =0, f=1.0MHz

=10V, I =1.0mA, f=1.0kHz

200

=5.0V, I =200μA, R =10Ω,

C S

f=10Hz to 15.7kHz

8.0

R1 (9-February 2010)

中文翻译

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