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CMUT7410TR PDF预览

CMUT7410TR

更新时间: 2024-11-06 21:01:19
品牌 Logo 应用领域
CENTRAL 开关光电二极管晶体管
页数 文件大小 规格书
2页 87K
描述
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, ULTRAMINI-3

CMUT7410TR 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.74最大集电极电流 (IC):1 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-F3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:TIN LEAD端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

CMUT7410TR 数据手册

 浏览型号CMUT7410TR的Datasheet PDF文件第2页 
TM  
CMUT3410 NPN  
CMUT7410 PNP  
Central  
Semiconductor Corp.  
SURFACE MOUNT ULTRAmini™  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMUT3410,  
COMPLEMENTARY LOW V  
CE(SAT)  
SILICON TRANSISTORS  
and CMUT7410, are low V  
silicon  
CE(SAT)  
transistors in an ULTRAmini™ surface mount  
package designed for small signal general  
purpose amplifier and switching applications,  
requiring low collector emitter saturation voltage.  
MARKING CODES:  
CMUT3410  
CMUT7410  
NPN MARKING CODE: C43  
PNP MARKING CODE: C47  
SOT-523 CASE  
MAXIMUM RATINGS: (T =25oC)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
40  
25  
V
V
CBO  
V
CEO  
V
6.0  
1.0  
1.5  
250  
V
EBO  
I
A
C
Collector Current (Peak)  
Power Dissipation  
I
A
CM  
P
D
mW  
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
-65 to +150  
500  
oC  
oC/W  
J
stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS: (T =25oC unless otherwise noted)  
A
TYP  
SYMBOL  
TEST CONDITIONS  
MIN  
NPN  
PNP  
MAX  
100  
UNITS  
nA  
nA  
V
I
V
V
=40V  
CBO  
CB  
EB  
I
=6.0V  
100  
EBO  
BV  
I =100µA  
40  
25  
CBO  
C
BV  
I =10mA  
C
V
CEO  
BV  
I =100µA  
6.0  
V
EBO  
E
V
I =50mA, I =5.0mA  
20  
35  
25  
40  
50  
75  
mV  
mV  
mV  
mV  
mV  
mV  
V
CE(SAT)  
C
B
V
I =100mA, I =10mA  
CE(SAT)  
C B  
V
I =200mA, I =20mA  
75  
80  
150  
250  
400  
450  
1.1  
0.9  
CE(SAT)  
C
B
V
I =500mA, I =50mA  
130  
200  
250  
150  
220  
275  
CE(SAT)  
C
B
V
I =800mA, I =80mA  
CE(SAT)  
C B  
V
I =1.0A, I =100mA  
C B  
I =800mA, I =80mA  
CE(SAT)  
V
BE(SAT)  
C
B
V
V
=1.0V, I =10mA  
V
BE(ON)  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
CB  
C
h
V
V
V
V
V
V
V
=1.0V, I =10mA  
C
100  
100  
100  
50  
FE  
h
=1.0V, I =100mA  
300  
FE  
C
h
=1.0V, I =500mA  
C
FE  
h
=1.0V, I =1.0A  
125  
75  
FE  
C
f
=10V, I =50mA, f=100MHz  
C
100  
MHz  
pF  
T
C
=10V, I =0, f=1.0MHz (CMUT3410)  
10  
15  
ob  
E
C
=10V, I =0, f=1.0MHz (CMUT7410)  
E
pF  
ob  
R0 (28-March 2005)  

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