Datasheet > CMUT5551EBKLEADFREE

CMUT5551EBKLEADFREE

更新时间： 2024-09-16 21:14:11

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
2页	349K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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CMUT5551EBKLEADFREE 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.84	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	120
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.25 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

CMUT5551EBKLEADFREE 数据手册

CMUT5551E

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMUT5551E is an

NPN Silicon Transistor, packaged in an SOT-523 case,

designed for general purpose amplifier applications

requiring high breakdown voltage and small space

saving packaging.

MARKING CODE: 5C1

FEATURES:

• High Collector Breakdown Voltage 250V

• Low Leakage Current 50nA Max

• Low Saturation Voltage 100mV Max @ 50mA

SOT-523 CASE

APPLICATIONS:

• General purpose switching and amplification • Complementary Device CMUT5401E

• Telephone applications

• SOT-523 Surface Mount Package

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

250

220

♦

CBO

♦^{Collector-Emitter Voltage}

Emitter-Base Voltage

CEO

6.0

EBO

Continuous Collector Current

Power Dissipation

600

°C

250

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

500

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

μA

=120V

CBO

EBO

=120V, T =100°C

=4.0V

♦^BV

I =100µA

250

220

6.0

CBO

I =1.0mA

CEO

I =10μA

EBO

♦

I =10mA, I =1.0mA

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

100

1.00

I =10mA, I =1.0mA

I =50mA, I =5.0mA

♦ Enhanced Specification

R1 (9-February 2010)

中文翻译

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