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CMUT5551EBKPBFREE

更新时间： 2024-11-06 13:06:59

品牌	Logo	应用领域
CENTRAL		晶体小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
2页	119K
描述
Transistor,

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中文翻译

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技术参数
数据手册

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CMUT5551EBKPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
Is Samacsys：	N	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	120
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.25 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

CMUT5551EBKPBFREE 数据手册

Central

CMUT5551

Semiconductor Corp.

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMUT5551

type is an NPN silicon transistor manufactured by

the epitaxial planar process, epoxy molded in a

surface mount package, designed for high

voltage amplifier applications.

MARKING CODE: 55C

SOT-523 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

180

160

6.0

600

250

CBO

CEO

EBO

T ,T

stg

-65 to +150

500

°C

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=120V

=120V, T =100°C

µA

CBO

I =100µA

180

160

6.0

CBO

CEO

EBO

I =1.0mA

I =10µA

I =10mA, I =1.0mA

0.15

0.20

1.00

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

=5.0V, I =10mA

250

=5.0V, I =50mA

=10V, I =10mA, f=100MHz

100

300

6.0

200

8.0

MHz

=10V, I =0, f=1.0MHz

=10V, I =1.0mA, f=1.0kHz

=5.0V, I =200µA, R =10Ω

f=10Hz to 15.7kHz

R0 (28-October 2004)

中文翻译

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