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CMUT5401EPBFREE

更新时间： 2024-11-06 13:02:55

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	119K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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CMUT5401EPBFREE 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.73
JESD-609代码：	e3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

CMUT5401EPBFREE 数据手册

Central

CMUT5401

Semiconductor Corp.

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMUT5401

type is a PNP silicon transistor manufactured by

the epitaxial planar process, epoxy molded in a

surface mount package, designed for high

voltage amplifier applications.

MARKING CODE: 54C

SOT-523 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

160

150

5.0

500

250

CBO

CEO

EBO

T ,T

stg

-65 to +150

500

°C

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=100V

=100V, T =150°C

µA

CBO

CEO

I =100µA

160

150

5.0

I =1.0mA

I =10µA

EBO

I =10mA, I =1.0mA

0.2

0.5

1.0

CE(SAT)

BE(SAT)

I =50mA, I =5.0mA

I =10mA, I =1.0mA

I =50mA, I =5.0mA

=5.0V, I =1.0mA

=5.0V, I =10mA

=5.0V, I =50mA

=10V, I =10mA, f=100MHz

=10V, I =0, f=1.0MHz

=10V, I =1.0mA, f=1.0kHz

=5.0V, I =200µA, R =10Ω

240

100

300

6.0

200

8.0

MHz

f=10Hz to 15.7kHz

R0 (28-October 2004)

中文翻译

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与CMUT5401EPBFREE相关器件

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CMUT5551E	CENTRAL	获取价格	ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR
CMUT5551EBK	CENTRAL	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 220V V(BR)CEO, 1-Element, NPN, Silicon, ULTRAM