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CMUT5401ETR PDF预览

CMUT5401ETR

更新时间: 2024-12-01 21:15:51
品牌 Logo 应用领域
CENTRAL 开关光电二极管晶体管
页数 文件大小 规格书
2页 349K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 220V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA MINI PACKAGE-3

CMUT5401ETR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.81
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:220 V
配置:SINGLE最小直流电流增益 (hFE):25
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

CMUT5401ETR 数据手册

 浏览型号CMUT5401ETR的Datasheet PDF文件第2页 
CMUT5401E  
www.centralsemi.com  
ENHANCED SPECIFICATION  
SURFACE MOUNT  
PNP SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMUT5401E is a  
PNP Silicon Transistor, packaged in an SOT-523 case,  
designed for general purpose amplifier applications  
requiring high breakdown voltage and small space  
saving packaging.  
MARKING CODE: 4C5  
FEATURES:  
SOT-523 CASE  
• High Collector Breakdown Voltage 250V  
• Low Leakage Current 50nA Max  
• Low Saturation Voltage 150mV Max @ 50mA  
• Complementary Device CMUT5551E  
• SOT-523 Surface Mount Package  
APPLICATIONS:  
• General purpose switching and amplification  
• Telephone applications  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
250  
220  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
7.0  
V
I
600  
mA  
mW  
°C  
C
P
250  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
500  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
50  
UNITS  
nA  
μA  
nA  
V
I
I
I
V
V
V
=120V  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=120V, T =100°C  
A
=3.0V  
50  
50  
BV  
I =100µA  
250  
220  
7.0  
CBO  
CEO  
EBO  
C
BV  
I =1.0mA  
C
V
BV  
I =10µA  
V
E
V  
I =10mA, I =1.0mA  
100  
150  
mV  
mV  
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
C
B
V  
V
I =50mA, I =5.0mA  
C B  
I =10mA, I =1.0mA  
1.00  
1.00  
C
B
V
I =50mA, I =5.0mA  
V
C
B
Enhanced Specification  
R1 (9-February 2010)  

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