BUZ31LH

更新时间： 2024-11-12 06:44:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	422K
描述
SIPMOS Power Transistor

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中文翻译

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数据手册

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BUZ31LH 数据手册

BUZ 31L H

SIPMOS Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• Logic Level

. Halogen-free according to IEC61249-2-21

Pin 1

Pin 2

Pin 3

Type

Package

Pb-free

DS(on)

BUZ 31 L H

200 V

13.5 A

0.2

Ω

PG-TO220-3

Yes

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

T = 28 ˚C

13.5

Pulsed drain current

Dpuls

T = 25 ˚C

13.5

Avalanche current,limited by T

jmax

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

jmax

I = 13.5 A, V

= 50 V, R

= 25

Ω

L = 1.65 mH, T = 25 ˚C

200

Gate source voltage

ESD-Sensitivity HBM as per MIL-STD 883

Power dissipation

Class 1

tot

T = 25 ˚C

Operating temperature

-55 ... + 150

˚C

K/W

Storage temperature

stg

Thermal resistance, chip case

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

≤

1.32

thJC

thJA

55 / 150 / 56

Rev. 2.4

Page 1

2009-11-10

12 3 4 5 6 7...10

中文翻译

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