Datasheet > BUZ32

BUZ32

更新时间： 2024-09-23 22:16:55

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
6页	51K
描述
9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET

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BUZ32 数据手册

BUZ32

Semiconductor

Data Sheet

October 1998

File Number 2416.1

9.5A, 200V, 0.400 Ohm, N-Channel Power

MOSFET

Features

• 9.5A, 200V

• r = 0.400Ω

[ /Title

(BUZ32)

/Subject

(9.5A,

200V,

This is an N-Channel enhancement mode silicon gate power

ﬁeld effect transistor designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

0.400

Ohm, N-

Channel

Power

MOS-

FET)

Formerly developmental type TA17412.

• Majority Carrier Device

Ordering Information

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

PART NUMBER

PACKAGE

BRAND

BUZ32

TO-220AB

NOTE: When ordering, use the entire part number.

/Author

()

Symbol

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FET,

Packaging

JEDEC TO-220AB

TO-

SOURCE

DRAIN

GATE

220AB)

/Creator

()

DRAIN (FLANGE)

/DOCIN

FO pdf-

mark

[ /Page-

Mode

/UseOut-

lines

/DOC-

VIEW

pdfmark

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

12 3 4 5 6

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BUZ32 替代型号

型号	品牌	替代类型	描述	数据表
IRF630NPBF	INFINEON	功能相似	HEXFET Power MOSFET
BUZ73	INFINEON	功能相似	SIPMOS Power Transistor
IRF630N	INFINEON	功能相似	Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

与BUZ32相关器件

型号	品牌	获取价格	描述	数据表
BUZ323	INFINEON	获取价格	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ325	INFINEON	获取价格	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ326	INFINEON	获取价格	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ32CHIP	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 9.5A I(D) \| CHIP
BUZ32-E3044	INFINEON	获取价格	Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
BUZ32-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
BUZ32-E3046	INFINEON	获取价格	Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
BUZ32H	INFINEON	获取价格	SIPMOS Power Transistor
BUZ32H3045A	INFINEON	获取价格	SIPMOS Power Transistor
BUZ32SMD	INFINEON	获取价格	SIPMOS Power Transistor