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BUV11 PDF预览

BUV11

更新时间: 2024-02-01 09:49:05
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管
页数 文件大小 规格书
4页 141K
描述
20 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 150 WATTS

BUV11 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92最大集电极电流 (IC):20 A
配置:Single最小直流电流增益 (hFE):20
JESD-609代码:e0最高工作温度:200 °C
极性/信道类型:NPN最大功率耗散 (Abs):150 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)标称过渡频率 (fT):8 MHz
Base Number Matches:1

BUV11 数据手册

 浏览型号BUV11的Datasheet PDF文件第2页浏览型号BUV11的Datasheet PDF文件第3页浏览型号BUV11的Datasheet PDF文件第4页 
Order this document  
by BUV11/D  
SEMICONDUCTOR TECHNICAL DATA  
20 AMPERES  
NPN SILICON  
POWER  
. . . designed for high current, high speed, high power applications.  
METAL TRANSISTOR  
200 VOLTS  
High DC current gain; h min. = 20 at I = 6 A  
FE C  
CE(sat) CE(sat) C  
Very fast switching times:  
max. = 0.8 µs at I = 12 A  
Low V max. = 0.6 V at I = 6 A  
, V  
150 WATTS  
T
F
C
CASE 1–07  
TO–204AA  
(TO–3)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
200  
250  
7
CEO(sus)  
V
CBO  
V
EBO  
Collector–Emitter Voltage (V  
BE  
= –1.5 V)  
V
250  
240  
CEX  
CER  
Collector–Emitter Voltage (R  
BE  
= 100 )  
V
Collector–Current— Continuous  
— Peak (pw  
I
20  
25  
Adc  
Apk  
C
10 ms)  
I
CM  
Base–Current continuous  
I
4
Adc  
Watts  
C
B
Total Power Dissipation @ T = 25 C  
C
P
150  
D
Operating and Storage Junction Temperature Range  
T , T  
65 to 200  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
1.17  
C/W  
JC  
1.0  
0.8  
0.6  
0.4  
0.2  
0
40  
80  
120  
160  
200  
T
, TEMPERATURE (°C)  
C
Figure 1. Power Derating  
SWITCHMODE is a trademark of Motorola, Inc.  
REV 7  
Motorola, Inc. 1995

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