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BUL147DW

更新时间： 2024-09-15 19:50:43
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
65页 487K
描述
8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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BUL147DW 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.78
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：8JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：14 MHz
Base Number Matches：1

BUL147DW 数据手册

 浏览型号BUL147DW的Datasheet PDF文件第2页浏览型号BUL147DW的Datasheet PDF文件第3页浏览型号BUL147DW的Datasheet PDF文件第4页浏览型号BUL147DW的Datasheet PDF文件第5页浏览型号BUL147DW的Datasheet PDF文件第6页浏览型号BUL147DW的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
*Motorola Preferred Device  
POWER TRANSISTOR  
8.0 AMPERES  
700 VOLTS  
45 and 125 WATTS  
The BUL147/BUL147F have an applications specific state–of–the–art die designed  
for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power  
supplies for all types of electronic equipment. These high–voltage/high–speed  
transistors offer the following:  
•
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain  
— Fast Switching  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Parametric Distributions are Tight and Consistent Lot–to–Lot  
Two Package Choices: Standard TO–220 or Isolated TO–220  
•
•
•
BUL147F, Isolated Case 221D, is UL Recognized to 3500 V  
: File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol  
BUL147  
BUL147F  
400  
Unit  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
CEO  
Vdc  
Vdc  
Vdc  
Adc  
V
700  
9.0  
CES  
EBO  
BUL147  
CASE 221A–06  
TO–220AB  
V
Collector Current — Continuous  
— Peak(1)  
I
C
8.0  
16  
I
CM  
Base Current — Continuous  
— Peak(1)  
I
4.0  
8.0  
Adc  
B
I
BM  
RMS Isolated Voltage(2)  
(for 1 sec, R.H. < 30%,  
Test No. 1 Per Fig. 22a  
Test No. 2 Per Fig. 22b  
Test No. 3 Per Fig. 22c  
V
ISOL  
—
—
—
4500  
3500  
1500  
Volts  
T
C
= 25°C)  
Total Device Dissipation  
Derate above 25°C  
(T = 25°C)  
C
P
D
125  
1.0  
45  
0.36  
Watts  
W/°C  
Operating and Storage Temperature  
T , T  
– 65 to 150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
BUL44  
BUL44F  
Unit  
BUL147F  
CASE 221D–02  
ISOLATED TO–220 TYPE  
UL RECOGNIZED  
Thermal Resistance — Junction to Case  
R
θJC  
R
θJA  
1.0  
62.5  
2.78  
62.5  
°C/W  
— Junction to Ambient  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
260  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)  
V
400  
—
—
—
—
Vdc  
µAdc  
µAdc  
C
CEO(sus)  
Collector Cutoff Current (V  
= Rated V  
, I = 0)  
I
CEO  
100  
CE  
CE  
CEO  
B
Collector Cutoff Current (V  
= Rated V  
, V  
= 0)  
I
—
—
—
—
—
—
100  
500  
100  
CES EB  
CES  
(T = 125°C)  
C
Collector Cutoff Current (V  
CE  
= 500 V, V  
= 0)  
(T = 125°C)  
C
EB  
= 9.0 Vdc, I = 0)  
Emitter Cutoff Current (V  
EB  
I
—
—
100  
µAdc  
C
EBO  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.  
(2) Proper strike and creepage distance must be provided.  
(continued)  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
3–343  
Motorola Bipolar Power Transistor Device Data  
1234567...65

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与BUL147DW相关器件

型号 品牌 获取价格 描述 数据表
BUL147F MOTOROLA

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 		POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS
BUL147F ONSEMI

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 		POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS
BUL147G ONSEMI

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 		功率 10A 400V NPN
BUL147L MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147N MOTOROLA

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 		10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL147S MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147T MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147U MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147U2 MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147UA MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas

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