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BUL213

更新时间: 2024-11-28 22:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
6页 73K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL213 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.77其他特性:HIGH RELIABILITY
最大集电极电流 (IC):3 A集电极-发射极最大电压:600 V
配置:SINGLE最小直流电流增益 (hFE):16
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:60 W
最大功率耗散 (Abs):60 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):6420 nsVCEsat-Max:0.9 V
Base Number Matches:1

BUL213 数据手册

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BUL213  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
SGS-THOMSON PREFERRED SALESTYPE  
HIGH VOLTAGE CAPABILITY  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
LOW BASE-DRIVE REQUIREMENTS  
VERY HIGH SWITCHING SPEED  
FULLY CHARACTERISED AT 125oC  
APPLICATIONS  
3
2
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
1
SWITCH MODE POWER SUPPLIES  
TO-220  
DESCRIPTION  
The BUL213 is manufactured using high voltage  
Multiepitaxial Mesa technology for cost-effective  
high performance. It uses a Hollow Emitter  
structure to enhance switching speeds.  
The BUL series is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
1300  
V
V
600  
9
V
3
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
6
A
IB  
2
A
IBM  
Base Peak Current (tp < 5 ms)  
Total Dissipation at Tc = 25 oC  
Storage Temperature  
4
60  
A
Ptot  
Tstg  
Tj  
W
oC  
oC  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
April 1997  

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