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BUL381 PDF预览

BUL381

更新时间: 2024-11-29 06:44:39
品牌 Logo 应用领域
锦美电子 - JMNIC 晶体晶体管
页数 文件大小 规格书
3页 45K
描述
Silicon NPN Power Transistors

BUL381 数据手册

 浏览型号BUL381的Datasheet PDF文件第2页浏览型号BUL381的Datasheet PDF文件第3页 
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
BUL381  
DESCRIPTION  
·
·With TO-220C package  
·High voltage capability  
·Very high switching speed  
APPLICATIONS  
·Designed for use in lighting  
applications and low cost  
switch-mode power supplies.  
PINNING  
PIN  
DESCRIPTION  
1
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
LIMITING VALUES  
SYMBOL  
PARAMETER  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
800  
V
Open base  
400  
V
V
Open collector  
9
5
A
ICM  
IB  
Collector current-Peak (tp<5 ms)  
Base current  
8
A
2
4
A
IBM  
PT  
Base current-Peak (tp<5 ms)  
Total power dissipation  
Junction temperature  
Storage temperature  
A
TC=25  
70  
W
Tj  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-C  
Thermal resistance from junction to case  
1.78  
/W  
JMnic  

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