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BUL382D PDF预览

BUL382D

更新时间: 2024-09-25 22:17:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
6页 82K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

BUL382D 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SFM包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
风险等级:5.85Is Samacsys:N
其他特性:HIGH RELIABILITY最大集电极电流 (IC):5 A
集电极-发射极最大电压:400 V配置:SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE):8JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:70 W最大功率耗散 (Abs):70 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):3800 ns
VCEsat-Max:1.1 VBase Number Matches:1

BUL382D 数据手册

 浏览型号BUL382D的Datasheet PDF文件第2页浏览型号BUL382D的Datasheet PDF文件第3页浏览型号BUL382D的Datasheet PDF文件第4页浏览型号BUL382D的Datasheet PDF文件第5页浏览型号BUL382D的Datasheet PDF文件第6页 
BUL381D  
BUL382D  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTORS  
SGS-THOMSON PREFERRED SALESTYPES  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
LARGE RBSOA  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
3
2
1
APPLICATIONS  
ELECTRONIC TRANSFORMERS FOR  
HALOGEN LAMPS  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
TO-220  
SWITCH MODE POWER SUPPLIES  
DESCRIPTION  
The BUL381D and BUL382D are manufactured  
using high voltage Multi Epitaxial Planar  
technology for high switching speeds and high  
voltage capability.  
INTERNAL SCHEMATIC DIAGRAM  
The BUL series is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
800  
V
V
400  
9
V
5
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
8
A
IB  
2
A
IBM  
Base Peak Current (tp < 5 ms)  
Total Dissipation at Tc = 25 oC  
Storage Temperature  
4
70  
A
Ptot  
Tstg  
Tj  
W
oC  
oC  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
July 1997  

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