BUL416B

更新时间： 2024-09-26 03:23:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
8页	210K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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中文翻译

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技术参数
数据手册

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BUL416B 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.84
最大集电极电流 (IC)：	6 A	配置：	Single
最小直流电流增益 (hFE)：	25	JESD-609代码：	e3
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	110 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Matte Tin (Sn)

BUL416B 数据手册

BUL416

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

STMicroelectronics PREFERRED SALES

TYPE

Figure 1: Package

NPN TRANSISTOR

HIGH VOLTAGE CAPABILITY

VERY HIGH SWITCHING SPEED

FULLY CHARACTERISEZ AT 125 C

LOW SPREAD OF DYNAMIC PARAMETERS

APPLICATIONS

TO-220

ELECTRONIC BALLAST FOR

FLUORESCENT LIGHTING

SWITCH MODE POWER SUPPLIES

Figure 2: Internal Schematic Diagram

DESCRIPTION

The device is manufactured using high voltage

Multi-Epitaxial Mesa technology for cost-effective

high performance. It uses a Hollow Emitter

structure to enhance switching speeds.

The BUL series is designed for use in lighting

applications and low cost switch-mode power

supplies.

Table 1: Order Codes

Part Number

Marking

Package

Packaging

BUL416A

or (#)

BUL416

TO-220

Tube

BUL416B

# See:note on page 2

Table 2: Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage (V = 0)

1600

800

CES

Collector-Emitter Voltage (I = 0)

CEO

Emitter-Base Voltage (I = 0)

EBO

Collector Current

Collector Peak Current (t < 5ms)

Base Current

Base Peak Current (t < 5ms)

110

°C

Total Dissipation at T = 25 C

Storage Temperature

tot

-65 to 150

stg

Rev. 3

January 2005

1/8

12 3 4 5 6 7 8

中文翻译

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BUL43BAN	ONSEMI	获取价格	2A, 350V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL43BAS	ONSEMI	获取价格	TRANSISTOR 2 A, 350 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
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BUL43BBA	ONSEMI	获取价格	2A, 350V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN