BUL381D

更新时间： 2024-11-29 09:02:27

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	44K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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BUL381D 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUL381D

DESCRIPTION

·With TO-220C package

·High voltage ,high speed

·Integrated antiparallel

collector-emitter diode

APPLICATIONS

·Designed for use in lighting

applications and low cost

switch-mode power supplies.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

UNIT

Open emitter

Open base

800

400

Open collector

I_CM

Collector current-Peak (t_p<5 ms)

Base current

I_B

I_BM

Base current-Peak (t_p<5 ms)

Total power dissipation

Junction temperature

Storage temperature

P_T

T_C=25℃

℃

T_j

150

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-C}

Thermal resistance from junction to case

1.78

℃/W

12 3

中文翻译

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