Datasheet > BUL382

BUL382

更新时间： 2024-09-26 06:44:39

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
2页	232K
描述
Silicon NPN Power Transistor

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中文翻译

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数据手册

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BUL382 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUL382

DESCRIPTION

·Collector–Emitter Sustaining Voltage

: V_CEO(SUS)= 400V(Min.)

·Low Collector Saturation Voltage

: V_CE(sat)= 0.5V(Max) @ I_C= 1A

·Very High Switching Speed

APPLICATIONS

·Designed for use in lighting applications and low cost switch-

mode power supplies.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CES

V_CEO

V_EBO

I_C

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

800

400

Collector Current-Continuous

Collector Current-peak t_p<5ms

Base Current-Continuous

Base Current-peak t_p<5ms

I_CM

I_B

I_BM

Collector Power Dissipation

T_C=25℃

P_C

℃

Junction Temperature

150

T_i

Storage Temperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.78

62.5

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

R_{th j-c}

R_{th j-A}

isc Website：www.iscsemi.cn

中文翻译

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