Datasheet > BUL38D_03

BUL38D_03

更新时间： 2024-09-26 03:23:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体开关晶体管高压
页数	文件大小	规格书
7页	229K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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中文翻译

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数据手册

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BUL38D_03 数据手册

BUL38D

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

■

STMicroelectronics PREFERRED

SALESTYPE

■

HIGH VOLTAGE CAPABILITY

LOW SPREAD OF DYNAMIC PARAMETERS

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

■

LOW BASE-DRIVE REQUIREMENTS

VERY HIGH SWITCHING SPEED

FULLY CHARACTERISED AT 125^oC

HIGH RUGGEDNESS

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

TO-220

APPLICATIONS

■

ELECTRONIC TRANSFORMERS FOR

HALOGEN LAMPS

■

SWITCH MODE POWER SUPPLIES

DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM

The BUL38D is manufactured using high voltage

Multi Epitaxial Planar technology for high

switching speeds and high voltage withstand

capability.

The BUL series is designed for use in lighting

applications and low cost switch-mode power

supplies.

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (V_BE= 0)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

800

450

I_CM

Collector Peak Current (t_p<5 ms)

Base Current

I_B

I_BM

Base Peak Current (t_p<5 ms)

P_tot

Total Dissipation at Tc = 25 C

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/7

February 2003

12 3 4 5 6 7

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