BUL38DA

更新时间： 2024-09-26 13:05:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	68K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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BUL38DA 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Is Samacsys：	N	Base Number Matches：	1

BUL38DA 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUL38D

DESCRIPTION

·With TO-220C package

·High voltage ,high speed

·Integrated antiparallel

collector-emitter diode

APPLICATIONS

·Designed for use in lighting applications

and low cost switch-mode power supplies.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

VALUE

UNIT

Open emitter

Open base

800

450

Open collector

I_CM

Collector current-Peak (t_p<5 ms)

Base current

I_B

I_BM

Base current-Peak (t_p<5 ms)

Total power dissipation

Junction temperature

Storage temperature

P_T

T_C=25℃

℃

T_j

150

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

R_{th j-C}

Thermal resistance from junction to case

1.56

℃/W

12 3

中文翻译

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