Datasheet > BUL310FP

BUL310FP

更新时间： 2024-11-29 06:44:39

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	214K
描述
Silicon NPN Power Transistors

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中文翻译

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BUL310FP 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BUL310FP

DESCRIPTION

·With TO-220F package

·High voltage,high speed

·Wide area of safe operation

APPLICATIONS

·Electronic ballasts for fluorescent lighting

·Switch mode power supplies

·Flyback and forward single transistor

low power converters

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220F) and symbol

Emitter

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

UNIT

Collector-base voltage

1000

Collector-emitter voltage

Emitter-base voltage

Open base

500

Open collector

Collector current (DC)

Collector current-Peak

Base current (DC)

I_CM

t_p<5ms

I_B

I_BM

Base current-Peak

t_p<5ms

T_C=25ꢀ

P_tot

Total power dissipation

Maximum operating junction temperature

Storage temperature

ꢀ

T_j

150

-65~150

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Thermal resistance junction to case

3.5

ꢀ/W

R_{th j-case}

12 3

中文翻译

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