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BUL310 PDF预览

BUL310

更新时间: 2024-11-28 22:17:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
6页 67K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL310 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.72
其他特性:HIGH RELIABILITY最大集电极电流 (IC):5 A
集电极-发射极最大电压:500 V配置:SINGLE
最小直流电流增益 (hFE):6JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:75 W最大功率耗散 (Abs):75 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):2060 ns
VCEsat-Max:1.1 VBase Number Matches:1

BUL310 数据手册

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BUL310  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
STMicroelectronics PREFERRED  
SALESTYPE  
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLEOPERATION  
VERY HIGH SWITCHING SPEED  
FULLY CHARACTERISED AT 125oC  
LARGE RBSOA  
3
2
1
APPLICATIONS  
TO-220  
ELECTRONIC BALLASTSFOR  
FLUORESCENT LIGHTING  
FLYBACKAND FORWARD SINGLE  
TRANSISTOR LOW POWER CONVERTERS  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and high voltage capability. It  
uses a Cellular Emitter structure with planar edge  
termination to enhance switching speeds while  
maintaining a wide RBSOA.  
INTERNAL SCHEMATIC DIAGRAM  
The BUL series is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
1000  
V
V
500  
9
V
5
V
ICM  
Collector Peak Current (tp <5 ms)  
Base Current  
10  
A
IB  
3
A
IBM  
Base Peak Current (tp <5 ms)  
4
75  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
January 1999  

BUL310 替代型号

型号 品牌 替代类型 描述 数据表
MJE18004G ONSEMI

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