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BUL312FH PDF预览

BUL312FH

更新时间: 2024-11-28 22:17:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
6页 202K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL312FH 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220FH
包装说明:PLASTIC, TO-220FH, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.81
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):5 A集电极-发射极最大电压:500 V
配置:SINGLE最小直流电流增益 (hFE):8
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):36 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUL312FH 数据手册

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BUL312FH  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
Ordering Code  
Marking  
Shipment  
BUL312FH  
BUL312FH  
Tube  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
FULLY CHARACTERIZED AT 125 °C  
LARGE R.B.S.O.A.  
FULLY INSULATED PACKAGE (U.L.  
COMPLIANT) FOR EASY MOUNTING  
TO-220FH  
APPLICATIONS:  
HORIZONTAL DEFLECTION FOR COLOR TV  
SWITCH MODE POWER SUPPLIES  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
The device is manufactured using High Voltage  
Multi Epitaxial Planar technology for high switching  
speeds and high voltage capability.  
It uses a Cellular Emitter structure with planar edge  
termination to enhance switching speeds while  
maintaining a wide R.B.S.O.A.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
1150  
500  
9
Unit  
V
V
Collector-Emitter Voltage (V = 0)  
CES  
BE  
V
CEO  
Collector-Emitter Voltage (I = 0)  
V
B
V
EBO  
Emitter-Base Voltage (I = 0)  
V
C
I
Collector Current  
5
A
C
I
Collector Peak Current (t < 5 ms)  
10  
A
CM  
p
I
B
Base Current  
3
A
I
Base Peak Current (t < 5 ms)  
4
A
BM  
p
P
Total Dissipation at T = 25 °C  
36  
W
V
tot  
c
V
isol  
Insulation Withstand Voltage (RMS) from All Three  
Leads to External Heatsink  
2500  
T
Storage Temperature  
–65 to 150  
150  
°C  
°C  
stg  
T
Max. Operating Junction Temperature  
j
August 2002  
1/6  

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