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BUL310PI PDF预览

BUL310PI

更新时间: 2024-11-06 03:23:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
7页 89K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

BUL310PI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
风险等级:5.74Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):5 A
集电极-发射极最大电压:500 V配置:SINGLE
最小直流电流增益 (hFE):10JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:35 W
最大功率耗散 (Abs):35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):2060 nsVCEsat-Max:1.1 V
Base Number Matches:1

BUL310PI 数据手册

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BUL310  
BUL310PI  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTORS  
SGS-THOMSON PREFERRED SALESTYPES  
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
FULLY CHARACTERISED AT 125oC  
LARGE RBSOA  
U.L. RECOGNISED ISOWATT220 PACKAGE  
(U.L. FILE # E81734 (N)):  
3
3
2
2
1
1
ISOLATION VOLTAGE 1500VRMS  
TO-220  
ISOWATT220  
APPLICATIONS  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
FLYBACK AND FORWARD SINGLE  
TRANSISTOR LOW POWER CONVERTERS  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
The BUL310 and BUL310PI are manufactured  
using high voltage Multi Epitaxial Planar  
technology for high switching speeds and high  
voltage capability. They use a Cellular Emitter  
structure with planar edge termination to enhance  
switching speeds while maintaining a wide  
RBSOA.  
The BUL series is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
BUL310  
BUL310PI  
VCES  
VCEO  
VEBO  
IC  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
1000  
500  
9
V
V
V
5
V
ICM  
IB  
Collector Peak Current (tp <5 ms)  
Base Current  
10  
3
A
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current (tp <5 ms)  
Total Dissipation at Tc = 25 oC  
Storage Temperature  
4
A
75  
35  
W
oC  
oC  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
September 1997  

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