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BUL310_02 PDF预览

BUL310_02

更新时间: 2024-11-29 09:02:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管高压
页数 文件大小 规格书
6页 207K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL310_02 数据手册

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BUL310  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
STMicroelectronics PREFERRED  
SALESTYPE  
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
FULLY CHARACTERISED AT 125oC  
LARGE RBSOA  
3
2
1
APPLICATIONS  
TO-220  
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
FLYBACK AND FORWARD SINGLE  
TRANSISTOR LOW POWER CONVERTERS  
DESCRIPTION  
The device is manufactured using high voltage  
Multi Epitaxial Planar technology for high  
switching speeds and high voltage capability. It  
uses a Cellular Emitter structure with planar edge  
termination to enhance switching speeds while  
maintaining a wide RBSOA.  
INTERNAL SCHEMATIC DIAGRAM  
The BUL series is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
1000  
V
V
500  
9
V
5
V
ICM  
Collector Peak Current (tp <5 ms)  
Base Current  
10  
A
IB  
3
A
IBM  
Base Peak Current (tp <5 ms)  
4
75  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
February 2002  

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