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BUL310 PDF预览

BUL310

更新时间: 2024-11-29 09:02:27
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 42K
描述
Silicon NPN Power Transistors

BUL310 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

BUL310 数据手册

 浏览型号BUL310的Datasheet PDF文件第2页浏览型号BUL310的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUL310  
DESCRIPTION  
·
·With TO-220C package  
·High voltage,high speed  
·Wide area of safe operation  
APPLICATIONS  
·Electronic ballasts for fluorescent lighting  
·Switch mode power supplies  
·Flyback and forward single transistor  
low power converters  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
1000  
Collector-emitter voltage  
Emitter-base voltage  
Open base  
500  
V
Open collector  
9
V
Collector current (DC)  
Collector current-Peak  
Base current (DC)  
5
A
ICM  
tp<5ms  
10  
A
IB  
3
4
A
IBM  
Base current-Peak  
tp<5ms  
A
Ptot  
Total power dissipation  
Maximum operating junction temperature  
Storage temperature  
TC=25  
75  
W
Tj  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Thermal resistance junction to case  
1.65  
/W  
Rth j-case  

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