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BUL310 PDF预览

BUL310

更新时间: 2024-11-29 06:44:39
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 99K
描述
Silicon NPN Power Transistors

BUL310 数据手册

 浏览型号BUL310的Datasheet PDF文件第2页浏览型号BUL310的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BUL310  
DESCRIPTION  
·With TO-220C package  
·High voltage,high speed  
·Wide area of safe operation  
APPLICATIONS  
·Electronic ballasts for fluorescent lighting  
·Switch mode power supplies  
·Flyback and forward single transistor  
low power converters  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
V
Collector-base voltage  
1000  
Collector-emitter voltage  
Emitter-base voltage  
Open base  
500  
V
Open collector  
9
V
Collector current (DC)  
Collector current-Peak  
Base current (DC)  
5
A
ICM  
tp<5ms  
10  
A
IB  
3
4
A
IBM  
Base current-Peak  
tp<5ms  
TC=25ꢀ  
A
Ptot  
Total power dissipation  
Maximum operating junction temperature  
Storage temperature  
75  
W
Tj  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Thermal resistance junction to case  
1.65  
/W  
Rth j-case  

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