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BUL147G

更新时间： 2024-11-06 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
10页 379K
描述
功率 10A 400V NPN

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中文翻译

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BUL147G 技术参数

是否无铅： 不含铅生命周期：End Of Life
零件包装代码：TO-220AB包装说明：LEAD FREE, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.25
其他特性：LEADFORM OPTIONS ARE AVAILABLE外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：400 V
配置：SINGLE最小直流电流增益 (hFE)：8
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：125 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：14 MHz
Base Number Matches：1

BUL147G 数据手册

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Order this document  
by BUL147/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
*Motorola Preferred Device  
POWER TRANSISTOR  
8.0 AMPERES  
700 VOLTS  
45 and 125 WATTS  
The BUL147/BUL147F have an applications specific state–of–the–art die designed  
for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power  
supplies for all types of electronic equipment. These high–voltage/high–speed  
transistors offer the following:  
•
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain  
— Fast Switching  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Parametric Distributions are Tight and Consistent Lot–to–Lot  
Two Package Choices: Standard TO–220 or Isolated TO–220  
•
•
•
BUL147F, Isolated Case 221D, is UL Recognized to 3500 V  
: File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol  
BUL147  
BUL147F  
400  
Unit  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
CEO  
Vdc  
Vdc  
Vdc  
Adc  
V
700  
9.0  
CES  
EBO  
V
BUL147  
CASE 221A–06  
TO–220AB  
Collector Current — Continuous  
— Peak(1)  
I
C
8.0  
16  
I
CM  
Base Current — Continuous  
— Peak(1)  
I
4.0  
8.0  
Adc  
B
I
BM  
RMS Isolated Voltage(2)  
(for 1 sec, R.H. < 30%,  
Test No. 1 Per Fig. 22a  
Test No. 2 Per Fig. 22b  
Test No. 3 Per Fig. 22c  
V
ISOL  
—
—
—
4500  
3500  
1500  
Volts  
T
C
= 25°C)  
Total Device Dissipation  
Derate above 25°C  
(T = 25°C)  
C
P
D
125  
1.0  
45  
0.36  
Watts  
W/°C  
Operating and Storage Temperature  
T , T  
– 65 to 150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
BUL44  
BUL44F  
Unit  
BUL147F  
CASE 221D–02  
ISOLATED TO–220 TYPE  
UL RECOGNIZED  
Thermal Resistance — Junction to Case  
R
θJC  
R
θJA  
1.0  
62.5  
2.78  
62.5  
°C/W  
— Junction to Ambient  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
260  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)  
V
400  
—
—
—
—
Vdc  
µAdc  
µAdc  
C
CEO(sus)  
Collector Cutoff Current (V  
= Rated V  
, I = 0)  
I
CEO  
100  
CE  
CE  
CEO  
B
Collector Cutoff Current (V  
= Rated V  
, V  
= 0)  
I
—
—
—
—
—
—
100  
500  
100  
CES EB  
CES  
(T = 125°C)  
C
Collector Cutoff Current (V  
CE  
= 500 V, V  
EB  
= 0)  
(T = 125°C)  
C
Emitter Cutoff Current (V  
EB  
= 9.0 Vdc, I = 0)  
I
—
—
100  
µAdc  
C
EBO  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.  
(continued)  
(2) Proper strike and creepage distance must be provided.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995
1234567...10

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与BUL147G相关器件

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BUL147L MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147N MOTOROLA

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 		10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL147S MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147T MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147U MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147U2 MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147UA MOTOROLA

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 		Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147W MOTOROLA

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 		10A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL147WD MOTOROLA

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 		10 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL1603ED STMICROELECTRONICS

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 		HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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