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BUL1603ED PDF预览

BUL1603ED

更新时间: 2024-11-28 22:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体开关晶体管功率双极晶体管高压局域网
页数 文件大小 规格书
6页 189K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUL1603ED 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.83
Is Samacsys:N最大集电极电流 (IC):11 A
集电极-发射极最大电压:650 V配置:SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE):4JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):245极性/信道类型:NPN
最大功率耗散 (Abs):80 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUL1603ED 数据手册

 浏览型号BUL1603ED的Datasheet PDF文件第2页浏览型号BUL1603ED的Datasheet PDF文件第3页浏览型号BUL1603ED的Datasheet PDF文件第4页浏览型号BUL1603ED的Datasheet PDF文件第5页浏览型号BUL1603ED的Datasheet PDF文件第6页 
BUL1603ED  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
PRELIMINARY DATA  
INTEGRATED ANTISATURATION AND  
PROTECTION NETWORK  
INTEGRATED ANTIPARALLEL COLLECTOR  
EMITTER DIODE  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
MINIMUM LOT-TO-LOT SPREAD FOR  
RELIABLE OPERATION  
VERY HIGH SWITCHING SPEED  
ARCING TEST SELF PROTECTED  
3
2
1
APPLICATIONS  
TO-220  
TWO LAMPS ELECTRONIC BALLAST FOR  
FLUORESCENT LIGHTING 277 VAC IN  
PUSH-PULL CONFIGURATION  
DESCRIPTION  
The BUL1603ED is a new device designed for  
fluorescent electronic ballast 277 VAC push-pull  
applications.  
INTERNAL SCHEMATIC DIAGRAM  
This device can be used without baker clamp and  
transil protection, reducing greatly the component  
count.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Collector-Emitter Voltage  
Value  
Unit  
VCES  
1600  
V
(VBE = 0; ICES = 10 mA; )  
VCES  
Collector-Emitter Voltage  
1550  
V
(VBE = 0; ICES = 100 µA; )  
Collector-Emitter Voltage (IB = 0)  
VCEO  
VEBO  
IC  
650  
V
V
Emitter-Base Voltage (IC = 0)  
Collector Current  
11  
3
A
ICM  
IB  
Collector Peak Current (tp <5 ms)  
Base Current  
6
A
2
A
IBM  
Ptot  
Tstg  
Tj  
Base Peak Current (tp <5 ms)  
4
80  
A
o
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
September 2002  

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