Datasheet > BUK9606-75B

BUK9606-75B

更新时间： 2024-11-08 11:14:35

品牌	Logo	应用领域
安世 - NEXPERIA		开关脉冲晶体管
页数	文件大小	规格书
13页	931K
描述
N-channel TrenchMOS logic level FETProduction

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BUK9606-75B 数据手册

BUK9606-75B

N-channel TrenchMOS logic level FET

Rev. 4 — 20 July 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 AEC Q101 compliant

 Suitable for logic level gate drive

sources

 Low conduction losses due to low

on-state resistance

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V, 24 V and 42 V loads

 Automotive systems

 General purpose power switching

 Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

V_GS= 5 V; T_mb= 25 °C;

see Figure 1; see Figure 3

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

300

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C

4.7

5.2

5.5

6.1

mΩ

V_GS= 5 V; I_D= 25 A;

T_j= 25 °C;

see Figure 11; see Figure 12

12 3 4 5 6 7...13

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