是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | PLASTIC, D2PAK-3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.32 | 雪崩能效等级(Eas): | 330 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (ID): | 75 A |
最大漏源导通电阻: | 0.012 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 266 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK9611-80E | NEXPERIA |
获取价格 |
N-channel TrenchMOS logic level FETProduction | |
BUK9612-55B | NXP |
获取价格 |
TrenchMOS⑩ logic level FET | |
BUK9612-55B | NEXPERIA |
获取价格 |
N-channel TrenchMOS logic level FETProduction | |
BUK9612-55B,118 | NXP |
获取价格 |
N-channel TrenchMOS logic level FET D2PAK 3-Pin | |
BUK9614-30 | NXP |
获取价格 |
TrenchMOS transistor Logic level FET | |
BUK9614-30,118 | NXP |
获取价格 |
69A, 30V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET | |
BUK9614-30118 | NXP |
获取价格 |
TRANSISTOR 69 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK9614-55 | NXP |
获取价格 |
TrenchMOS transistor Logic level FET | |
BUK9614-55/T3 | NXP |
获取价格 |
TRANSISTOR 68 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK9614-55A | NXP |
获取价格 |
TrenchMOS logic level FET |