Datasheet > BUK9609-75A

BUK9609-75A

更新时间： 2024-12-02 11:11:11

品牌	Logo	应用领域
安世 - NEXPERIA		开关脉冲晶体管
页数	文件大小	规格书
13页	751K
描述
N-channel TrenchMOS logic level FETProduction

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BUK9609-75A 数据手册

BUK9609-75A

N-channel TrenchMOS logic level FET

Rev. 4 — 30 August 2011

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 Low conduction losses due to low

 Suitable for logic level gate drive

on-state resistance

sources

 Q101 compliant

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V, 24 V and 42 V loads

 Motors, lamps and solenoids

 Automotive and general purpose

power switching

1.4 Quick reference data

Table 1.

Quick reference data

Conditions

Symbol Parameter

Min Typ Max Unit

V_DS

I_D

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

drain current

V_GS= 5 V; T_mb= 25 °C;

see Figure 3; see Figure 1

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

230

Static characteristics

R_DSon

drain-source

on-state resistance

V_GS= 4.5 V; I_D= 25 A; T_j= 25 °C

V_GS= 10 V; I_D= 25 A; T_j= 25 °C

9.95 mΩ

7.23 8.5

mΩ

V_GS= 5 V; I_D= 25 A; T_j= 25 °C;

see Figure 13; see Figure 14

7.6

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

I_D= 75 A; V_sup≤ 75 V;

R_GS= 50 Ω; V_GS= 5 V;

T_j(init)= 25 °C; unclamped

562 mJ

avalanche energy

[1] Continuous current is limited by package.

12 3 4 5 6 7...13

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