Datasheet > BUK9609-75A/T3

BUK9609-75A/T3

更新时间： 2024-12-01 14:48:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	194K
描述
TRANSISTOR,MOSFET,N-CHANNEL,75V V(BR)DSS,75A I(D),TO-263AB

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中文翻译

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技术参数
数据手册

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BUK9609-75A/T3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	75 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	230 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

BUK9609-75A/T3 数据手册

BUK9509-75A

N-channel TrenchMOS logic level FET

Rev. 03 — 22 September 2008

Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

Suitable for logic level gate drive

on-state resistance

sources

Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V, 24 V and 42 V loads

Motors, lamps and solenoids

Automotive and general purpose

power switching

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

Min

Typ

Max Unit

V_DS

I_D

drain current

V_GS= 5 V; T_j= 25 °C; see

Figure 3; see Figure 1

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

230

562

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

I_D= 75 A; V_sup≤ 75 V;

R_GS= 50 Ω; V_GS= 5 V;

T_j(init)= 25 °C; unclamped

avalanche energy

Static characteristics

R_DSon

drain-source

on-state resistance

V_GS= 4.5 V; I_D= 25 A;

T_j= 25 °C

9.95 mΩ

mΩ

V_GS= 5 V; I_D= 25 A;

T_j= 25 °C; see Figure 12;

see Figure 15

7.6

12 3 4 5 6 7...12

中文翻译

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