BUK9609-55A

更新时间： 2024-11-30 22:19:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	292K
描述
TrenchMOS logic level FET

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中文翻译

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数据手册

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BUK9609-55A 数据手册

BUK95/9609-55A

TrenchMOS™ logic level FET

Rev. 01 — 21 February 2002

Product data

1. Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

TrenchMOS™ technology, featuring very low on-state resistance.

Product availability:

BUK9509-55A in SOT78 (TO-220AB)

BUK9609-55A in SOT404 (D²-PAK).

2. Features

■ TrenchMOS™ technology

■ Q101 compliant

■ 175 °C rated

■ Logic level compatible.

3. Applications

■ Automotive and general purpose power switching:

◆ 12 V and 24 V loads

◆ Motors, lamps and solenoids.

4. Pinning information

Table 1:

Pinning - SOT78 and SOT404, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

[1]

drain (d)

source (s)

mounting base;

connected to drain (d)

MBB076

MBK116

MBK106

2 3

SOT404 (D²-PAK)

SOT78 (TO-220AB)

[1] It is not possible to make connection to pin 2 of the SOT404 package.

12 3 4 5 6 7...14

中文翻译

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