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BSP52T3G PDF预览

BSP52T3G

更新时间： 2024-11-29 03:22:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管达林顿晶体管
页数 文件大小 规格书
4页 47K
描述
NPN Small−Signal Darlington Transistor

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中文翻译

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BSP52T3G 数据手册

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BSP52T1, BSP52T3  
Preferred Devices  
NPN Small−Signal  
Darlington Transistor  
This NPN small signal Darlington transistor is designed for use in  
switching applications, such as print hammer, relay, solenoid and lamp  
drivers. The device is housed in the SOT-223 package, which is  
designed for medium power surface mount applications.  
http://onsemi.com  
Features  
MEDIUM POWER  
NPN SILICON  
SURFACE MOUNT  
• The SOT-223 Package can be soldered using wave or reflow. The  
formed leads absorb thermal stress during soldering, eliminating the  
possibility of damage to the die  
DARLINGTON TRANSISTOR  
• Available in 12 mm Tape and Reel  
Use BSP52T1 to order the 7 inch/1000 unit reel  
• PNP Complement is BSP62T1  
COLLECTOR 2,4  
• Pb−Free Packages are Available  
BASE  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Symbol  
Max  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
EMITTER 3  
V
CES  
CBO  
EBO  
MARKING DIAGRAM  
V
V
90  
4
5.0  
1.0  
1
Collector Current  
I
2
C
AYW  
3
AS3G  
Total Power Dissipation (Note 1)  
P
P
D
D
SOT−223  
G
@ T = 25°C  
0.8  
6.4  
W
mW/°C  
A
CASE 318E  
STYLE 1  
Derate above 25°C  
Total Power Dissipation (Note 2)  
A
Y
W
AS3  
G
= Assembly Location  
= Year  
= Work Week  
= Specific Device Code  
= Pb−Free Package  
@ T = 25°C  
1.25  
10  
W
mW/°C  
A
Derate above 25°C  
Operating and Storage  
Temperature Range  
T , T  
−65 to 150  
°C  
J
stg  
(Note: Microdot may be in either location)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
BSP52T1  
SOT−223  
1000/Tape & Reel  
Characteristic  
Symbol  
Value  
Unit  
BSP52T1G  
SOT−223  
(Pb−Free)  
1000/Tape & Reel  
Thermal Resistance (Note 1)  
Junction-to-Ambient  
R
q
JA  
156  
°C/W  
BSP52T3  
SOT−223  
4000/Tape & Reel  
4000/Tape & Reel  
Thermal Resistance (Note 2)  
Junction-to-Ambient  
R
100  
°C/W  
q
JA  
BSP52T3G  
SOT−223  
(Pb−Free)  
Maximum Temperature for Soldering  
Purposes  
Time in Solder Bath  
T
260  
10  
°C  
Sec  
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum  
recommended footprint.  
2. Device mounted on a FR-4 glass epoxy printed circuit board using 1 cm pad.  
2
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 5  
BSP52T1/D  
 
1234

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BSP52T3G 替代型号

型号 品牌 替代类型 描述 数据表
BSP52T3 ONSEMI

完全替代

 NPN Small−Signal Darlington Transistor
BSP52T1G ONSEMI

完全替代

 NPN Small−Signal Darlington Transistor
BSP52T1 ONSEMI

完全替代

 MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

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