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BSP52T1G PDF预览

BSP52T1G

更新时间： 2024-02-27 15:27:09
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管达林顿晶体管开关光电二极管PC
页数 文件大小 规格书
4页 47K
描述
NPN Small−Signal Darlington Transistor

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中文翻译

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BSP52T1G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：TO-261AA包装说明：TO-261, 4 PIN
针数：4Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：23 weeks
风险等级：0.61Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：224522
Samacsys Pin Count：4Samacsys Part Category：Transistor
Samacsys Package Category：SOT223 (3-Pin)Samacsys Footprint Name：SOT-223 TP-261 CASE 318E-04
Samacsys Released Date：2015-07-28 08:25:03Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：1 A
集电极-发射极最大电压：80 V配置：DARLINGTON
最小直流电流增益 (hFE)：2000JEDEC-95代码：TO-261AA
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：1.25 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

BSP52T1G 数据手册

 浏览型号BSP52T1G的Datasheet PDF文件第2页浏览型号BSP52T1G的Datasheet PDF文件第3页浏览型号BSP52T1G的Datasheet PDF文件第4页 
BSP52T1, BSP52T3  
Preferred Devices  
NPN Small−Signal  
Darlington Transistor  
This NPN small signal Darlington transistor is designed for use in  
switching applications, such as print hammer, relay, solenoid and lamp  
drivers. The device is housed in the SOT-223 package, which is  
designed for medium power surface mount applications.  
http://onsemi.com  
Features  
MEDIUM POWER  
NPN SILICON  
SURFACE MOUNT  
• The SOT-223 Package can be soldered using wave or reflow. The  
formed leads absorb thermal stress during soldering, eliminating the  
possibility of damage to the die  
DARLINGTON TRANSISTOR  
• Available in 12 mm Tape and Reel  
Use BSP52T1 to order the 7 inch/1000 unit reel  
• PNP Complement is BSP62T1  
COLLECTOR 2,4  
• Pb−Free Packages are Available  
BASE  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Symbol  
Max  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
EMITTER 3  
V
CES  
CBO  
EBO  
MARKING DIAGRAM  
V
V
90  
4
5.0  
1.0  
1
Collector Current  
I
2
C
AYW  
3
AS3G  
Total Power Dissipation (Note 1)  
P
P
D
D
SOT−223  
G
@ T = 25°C  
0.8  
6.4  
W
mW/°C  
A
CASE 318E  
STYLE 1  
Derate above 25°C  
Total Power Dissipation (Note 2)  
A
Y
W
AS3  
G
= Assembly Location  
= Year  
= Work Week  
= Specific Device Code  
= Pb−Free Package  
@ T = 25°C  
1.25  
10  
W
mW/°C  
A
Derate above 25°C  
Operating and Storage  
Temperature Range  
T , T  
−65 to 150  
°C  
J
stg  
(Note: Microdot may be in either location)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
BSP52T1  
SOT−223  
1000/Tape & Reel  
Characteristic  
Symbol  
Value  
Unit  
BSP52T1G  
SOT−223  
(Pb−Free)  
1000/Tape & Reel  
Thermal Resistance (Note 1)  
Junction-to-Ambient  
R
q
JA  
156  
°C/W  
BSP52T3  
SOT−223  
4000/Tape & Reel  
4000/Tape & Reel  
Thermal Resistance (Note 2)  
Junction-to-Ambient  
R
100  
°C/W  
q
JA  
BSP52T3G  
SOT−223  
(Pb−Free)  
Maximum Temperature for Soldering  
Purposes  
Time in Solder Bath  
T
260  
10  
°C  
Sec  
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum  
recommended footprint.  
2. Device mounted on a FR-4 glass epoxy printed circuit board using 1 cm pad.  
2
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 5  
BSP52T1/D  
 
1234

中文翻译

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BSP52T1G 替代型号

型号 品牌 替代类型 描述 数据表
BSP52T3G ONSEMI

完全替代

 NPN Small−Signal Darlington Transistor
BSP52T1 ONSEMI

完全替代

 MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
BSP52E6327 INFINEON

类似代替

 Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

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