是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.16 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 80 V |
配置: | DARLINGTON | 最小直流电流增益 (hFE): | 2000 |
JESD-30 代码: | R-PDSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 1.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | 最大关闭时间(toff): | 1500 ns |
最大开启时间(吨): | 400 ns | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BSP51 | INFINEON |
完全替代 |
NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturatio | |
BSP52T3G | ONSEMI |
类似代替 |
NPN Small−Signal Darlington Transistor | |
BSP52T1G | ONSEMI |
类似代替 |
NPN Small−Signal Darlington Transistor |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP52E6327HTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PL | |
BSP52-E6433 | INFINEON |
获取价格 |
Transistor | |
BSP52H6327TR | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP | |
BSP52H6327XTSA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP | |
BSP52-Q | NEXPERIA |
获取价格 |
NPN Darlington transistorProduction | |
BSP52Q-HAF | SWST |
获取价格 |
达林顿三极管 | |
BSP52-T | NXP |
获取价格 |
TRANSISTOR 0.5 A, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BSP52T/R | NXP |
获取价格 |
TRANSISTOR 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BIP | |
BSP52T1 | MOTOROLA |
获取价格 |
MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT | |
BSP52T1 | ONSEMI |
获取价格 |
MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT |