5秒后页面跳转
BSP52E6327 PDF预览

BSP52E6327

更新时间: 2024-09-23 20:02:51
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管晶体管
页数 文件大小 规格书
8页 115K
描述
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

BSP52E6327 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.16外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:DARLINGTON最小直流电流增益 (hFE):2000
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):1500 ns
最大开启时间(吨):400 nsBase Number Matches:1

BSP52E6327 数据手册

 浏览型号BSP52E6327的Datasheet PDF文件第2页浏览型号BSP52E6327的Datasheet PDF文件第3页浏览型号BSP52E6327的Datasheet PDF文件第4页浏览型号BSP52E6327的Datasheet PDF文件第5页浏览型号BSP52E6327的Datasheet PDF文件第6页浏览型号BSP52E6327的Datasheet PDF文件第7页 
BSP50-BSP52  
NPN Silicon Darlington Transistors  
High collector current  
4
3
Low collector-emitter saturation voltage  
Complementary types: BSP60 - BSP52 (PNP)  
2
1
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
Marking  
Pin Configuration  
Package  
SOT223  
SOT223  
SOT223  
BSP50  
BSP51  
BSP52  
BSP50 1=B 2=C 3=E  
BSP51 1=B 2=C 3=E  
BSP52 1=B 2=C 3=E  
4=C  
4=C  
4=C  
-
-
-
-
-
-
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
BSP50  
V
V
V
CEO  
CBO  
EBO  
45  
60  
80  
BSP51  
BSP52  
Collector-base voltage  
BSP50  
60  
80  
90  
BSP51  
BSP52  
5
1
Emitter-base voltage  
Collector current  
A
I
C
2
Peak collector current  
Base current  
I
CM  
100  
1.5  
mA  
W
I
B
Total power dissipation-  
P
tot  
T 124 °C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
1Pb-containing package may be available upon special request  
1
2007-03-30  

BSP52E6327 替代型号

型号 品牌 替代类型 描述 数据表
BSP51 INFINEON

完全替代

NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturatio
BSP52T3G ONSEMI

类似代替

NPN Small−Signal Darlington Transistor
BSP52T1G ONSEMI

类似代替

NPN Small−Signal Darlington Transistor

与BSP52E6327相关器件

型号 品牌 获取价格 描述 数据表
BSP52E6327HTSA1 INFINEON

获取价格

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PL
BSP52-E6433 INFINEON

获取价格

Transistor
BSP52H6327TR INFINEON

获取价格

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP
BSP52H6327XTSA1 INFINEON

获取价格

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP
BSP52-Q NEXPERIA

获取价格

NPN Darlington transistorProduction
BSP52Q-HAF SWST

获取价格

达林顿三极管
BSP52-T NXP

获取价格

TRANSISTOR 0.5 A, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BSP52T/R NXP

获取价格

TRANSISTOR 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-73, 4 PIN, BIP
BSP52T1 MOTOROLA

获取价格

MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
BSP52T1 ONSEMI

获取价格

MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT