Datasheet > BSP613P

BSP613P

更新时间： 2024-12-01 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
6页	211K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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BSP613P 数据手册

SMD Type

MOSFET

SIPMOS Small-Signal-Transistor

BSP613P

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

Features

+0.2

0.90

-0.2

+0.1

3.00

-0.1

P-Channel

+0.3

7.00

-0.3

Enhancement mode

Avalanche rated

dv/dt rated

1 Gate

2 Drain

Ideal for fast switching buck converter

3 Source

+0.1

0.70

-0.1

2.9

4 Drain

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Continuous drain current T^A=25

Pulsed drain current T^A=25

Avalanche energy, single pulse *1

Avalanche energy, periodic limited by Tjmax

Reverse diode dv /dt *2

Symbol

I^D

Rating

Unit

-2.9

I ^DP

-11.6

E^AS

150

E^AR

0.18

d^v/d^t

V^GS

kV/

Gate source voltage

Power dissipation

P^D

1.8

Operating and storage temperature

Thermal resistance,junction - soldering point

Operating and storage temperature

T^j, T^stg

R^thJS

T ^j, T ^stg

-55 to +150

K/W

-55 to 150

*1 ID=-2.9A,VDS=-25 V, RGS=25

*2 I^s=2.9A, V^DS=-48 V,dⁱ/d^t=-200 A/ s,T^j,max=150

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