Datasheet > BSP170P_09

BSP170P_09

更新时间： 2024-11-06 09:00:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	294K
描述
SIPMOS Small-Signal-Transistor

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中文翻译

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数据手册

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BSP170P_09 数据手册

BSP 170 P

SIPMOS^®Small-Signal-Transistor

Product Summary

Features

V _DS

-60

0.3

Ω

• P-Channel

R _DS(on),max

I _D

• Enhancement mode

-1.9

• Avalanche rated

• dv /dt rated

PG-SOT-223

• Pb-free lead finishing; RoHS compliant

Type

Package

Tape and reel information

Marking Lead free

BSP170 Yes

Packing

BSP 170 P PG-SOT-223

L6327: 1000pcs/reel

Non Dry

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

steady state

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

-1.9

-1.5

-7.6

Continuous drain current

I _D,pulse

E _AS

Pulsed drain current

I _D=1.9 A, R _GS=25 Ω

Avalanche energy, single pulse

Avalanche energy, periodic limited by

T_jmax

E _AR

0.18

I _D=1.9 A, V _DS=48 V,

di /dt =-200 A/µs,

-6

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=150 °C

V _GS

±20

1.8

Gate source voltage

P _tot

T _A=25 °C

Power dissipation

°C

T _j, T _stg

-55 ... 150

1A (250V to 500V)

260 °C

Operating and storage temperature

ESD class

JESD22-A114 (HBM)

Soldering temperature

IEC climatic category; DIN IEC 68-1

55/150/56

Rev 2.52

page 1

2009-02-16

12 3 4 5 6 7...9

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