5秒后页面跳转
捷配首页

Datasheet > BSM600GA120DLCHOSA1
BSM600GA120DLCHOSA1 PDF预览

BSM600GA120DLCHOSA1

更新时间： 2024-09-28 21:04:51
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网栅晶体管
页数 文件大小 规格书
8页 288K
描述
Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel,

阅读下载

中文翻译

获取价格

BSM600GA120DLCHOSA1 技术参数

生命周期：Active包装说明：FLANGE MOUNT, R-XUFM-X5
Reach Compliance Code：compliant风险等级：5.62
最大集电极电流 (IC)：900 A集电极-发射极最大电压：1200 V
配置：SINGLE WITH BUILT-IN DIODEJESD-30 代码：R-XUFM-X5
元件数量：1端子数量：5
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER晶体管元件材料：SILICON
标称断开时间 (toff)：650 ns标称接通时间 (ton)：190 ns
Base Number Matches：1

BSM600GA120DLCHOSA1 数据手册

 浏览型号BSM600GA120DLCHOSA1的Datasheet PDF文件第2页浏览型号BSM600GA120DLCHOSA1的Datasheet PDF文件第3页浏览型号BSM600GA120DLCHOSA1的Datasheet PDF文件第4页浏览型号BSM600GA120DLCHOSA1的Datasheet PDF文件第5页浏览型号BSM600GA120DLCHOSA1的Datasheet PDF文件第6页浏览型号BSM600GA120DLCHOSA1的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
BSM600GA120DLC  
62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode  
62mm C-series module with low loss IGBT2 and EmCon diode  
IGBT-Wechselrichter / IGBT-inverter  
Höchstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1200  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C, TÝÎ = 150°C  
T† = 25°C, TÝÎ = 150°C  
I† ÒÓÑ  
I†  
600  
900  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
1200  
3900  
+/-20  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 150°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 600 A, V•Š = 15 V  
I† = 600 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
2,10 2,60  
2,40 2,90  
V
V
V†Š ÙÈÚ  
V•ŠÚÌ  
Q•  
Gate-Schwellenspannung  
gate threshold voltage  
I† = 24,0 mA, V†Š = V•Š, TÝÎ = 25°C  
V•Š = -15 V ... +15 V  
4,5  
5,5  
6,40  
0,5  
6,5  
V
µC  
Â
Gateladung  
gate charge  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
44,0  
2,80  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
CØþÙ  
I†Š»  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
5,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
I•Š»  
tÁ ÓÒ  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 600 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 3,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,11  
0,12  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 600 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 3,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,06  
0,07  
µs  
µs  
tØ  
tÁ ÓËË  
tË  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 600 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 3,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,55  
0,57  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 600 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 3,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,07  
0,08  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 600 A, V†Š = 600 V  
V•Š = ±15 V, L» = 90 nH  
R•ÓÒ = 3,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
mJ  
mJ  
EÓÒ  
58,0  
105  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 600 A, V†Š = 600 V  
V•Š = ±15 V, L» = 90 nH  
R•ÓËË = 3,0 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
mJ  
mJ  
EÓËË  
Kurzschlußverhalten  
SC data  
t« ù 10 µs, V•Š ù 15 V  
TÝÎ = 125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
3600  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
0,032 K/W  
K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
RÚ̆™  
0,016  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Martin Knecht  
date of publication: 2004-7-5  
revision: 3.2  
approved by: Wilhelm Rusche  
1
12345678

中文翻译

下载PDF

与BSM600GA120DLCHOSA1相关器件

型号 品牌 获取价格 描述 数据表
BSM600GA120DLCS ROCHESTER

获取价格

 		IGBT, MODULE-5
BSM600GA120DLCSHOSA1 INFINEON

获取价格

 		Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
BSM651F ETC

获取价格

 		TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 500V V(BR)DSS | 9A I(D)
BSM652F ETC

获取价格

 		TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 500V V(BR)DSS | 17A I(D)
BSM681F ETC

获取价格

 		TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 800V V(BR)DSS | 5.3A I(D)
BSM682F ETC

获取价格

 		TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 800V V(BR)DSS | 10A I(D)
BSM691F ETC

获取价格

 		TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 1KV V(BR)DSS | 4.8A I(D)
BSM692F ETC

获取价格

 		TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 1KV V(BR)DSS | 9A I(D)
BSM-7100-1 GAMEWELL-FCI

获取价格

 		Compact Analog Addressable Fire Alarm Control Panel
BSM-7100-1D GAMEWELL-FCI

获取价格

 		Compact Analog Addressable Fire Alarm Control Panel

与BSM600GA120DLCHOSA1相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证