Datasheet > BSM50GX120DN2

BSM50GX120DN2

更新时间： 2024-11-16 12:26:11

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
11页	248K
描述
IGBT Power Module

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中文翻译

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数据手册

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BSM50GX120DN2 数据手册

BSM 50 GB 120 DN2

IGBT Power Module

• Half-bridge

• Including fast free-wheeling diodes

• Package with insulated metal base plate

Type

Package

Ordering Code

BSM 50 GB 120 DN2

1200V 78A

HALF-BRIDGE 1

C67076-A2105-A70

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-gate voltage

1200

CGR

= 20 kW

1200

± 20

Gate-emitter voltage

DC collector current

T = 25 °C

T = 80 °C

Pulsed collector current, t = 1 ms

Cpuls

T = 25 °C

156

100

T = 80 °C

Power dissipation per IGBT

tot

T = 25 °C

400

Chip temperature

+ 150

°C

Storage temperature

-40 ... + 125

stg

Thermal resistance, chip case

Diode thermal resistance, chip case

Insulation test voltage, t = 1min.

Creepage distance

0.3

0.6

K/W

thJC

2500

Vac

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

sec

40 / 125 / 56

Oct-21-1997

12 3 4 5 6 7...11

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