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BSM50GP60G PDF预览

BSM50GP60G

更新时间: 2024-11-15 23:35:43
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描述
IGBT Module

BSM50GP60G 数据手册

 浏览型号BSM50GP60G的Datasheet PDF文件第2页浏览型号BSM50GP60G的Datasheet PDF文件第3页浏览型号BSM50GP60G的Datasheet PDF文件第4页浏览型号BSM50GP60G的Datasheet PDF文件第5页浏览型号BSM50GP60G的Datasheet PDF文件第6页浏览型号BSM50GP60G的Datasheet PDF文件第7页 
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
BSM50GP60G  
Elektrische Eigenschaften / Electrical properties  
Höchstzulässige Werte / Maximum rated values  
Diode Gleichrichter/ Diode Rectifier  
Periodische Rückw. Spitzensperrspannung  
repetitive peak reverse voltage  
VRRM  
1600  
40  
V
A
A
Durchlaßstrom Grenzeffektivwert  
RMS forward current per chip  
IFRMSM  
Dauergleichstrom  
TC = 80°C  
Id  
50  
DC forward current  
tP = 10 ms, Tvj = 25°C  
tP = 10 ms, Tvj = 150°C  
tP = 10 ms, Tvj = 25°C  
tP = 10 ms, Tvj = 150°C  
IFSM  
Stoßstrom Grenzwert  
surge forward current  
Grenzlastintegral  
I2t - value  
315  
260  
500  
340  
A
A
A2s  
A2s  
I2t  
Transistor Wechselrichter/ Transistor Inverter  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
600  
V
IC,nom.  
IC  
Tc = 80 °C  
50  
70  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms,  
TC  
=
ICRM  
80 °C  
100  
250  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
TC = 25°C  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
Diode Wechselrichter/ Diode Inverter  
Dauergleichstrom  
DC forward current  
IF  
Tc = 80 °C  
tP = 1 ms  
50  
A
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
IFRM  
100  
760  
Grenzlastintegral  
I2t - value  
I2t  
A2s  
VR = 0V, tp = 10ms, Tvj = 125°C  
Transistor Brems-Chopper/ Transistor Brake-Chopper  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
VCES  
600  
V
TC = 80 °C  
IC,nom.  
IC  
25  
35  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
TC = 25 °C  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tP = 1 ms, TC = 80°C  
ICRM  
Ptot  
50  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
TC = 25°C  
130  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
Diode Brems-Chopper/ Diode Brake-Chopper  
Dauergleichstrom  
DC forward current  
IF  
Tc = 80 °C  
12,5  
25  
A
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
prepared by: Andreas Schulz  
approved by: Robert Severin  
date of publication:29.03.2001  
revision: 3  
1(11)  
DB-PIM-10.xls  

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