型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSM50GP60G | ETC |
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IGBT Module | |
BSM50GX120DN2 | INFINEON |
获取价格 |
IGBT Power Module | |
BSM600C12P3G201 | ROHM |
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BSM600C12P3G201是由SiC-UMOSFET和SiC-SBD构成的斩波模块。适 | |
BSM600D12P3G001 | ROHM |
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BSM600D12P3G001是由罗姆公司生产的SiC-UMOSFET和SiC-SBD构成 | |
BSM600D12P4G103 (新产品) | ROHM |
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BSM600D12P4G103 is a half bridge module consisting of SiC-UMOSFET, suitable for motor driv | |
BSM600GA120DLC | ROCHESTER |
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900A, 1200V, N-CHANNEL IGBT | |
BSM600GA120DLCHOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, | |
BSM600GA120DLCS | ROCHESTER |
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IGBT, MODULE-5 | |
BSM600GA120DLCSHOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 | |
BSM651F | ETC |
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TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 500V V(BR)DSS | 9A I(D) |