生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-F5 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.69 | 其他特性: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 120 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 14.6 A | 最大漏源导通电阻: | 0.0116 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F5 |
元件数量: | 1 | 端子数量: | 5 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 160 A |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC079N10NSG | INFINEON |
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OptiMOS?2 Power-Transistor | |
BSC079N10NSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 13.4A I(D), 100V, 0.0079ohm, 1-Element, N-Channel, Silicon, | |
BSC0802LS | INFINEON |
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Power Field-Effect Transistor, | |
BSC080N03LSG | INFINEON |
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OptiMOS?3 Power-MOSFET | |
BSC080N03MSG | INFINEON |
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OptiMOS™3 M-Series Power-MOSFET | |
BSC080N03MSG | ADI |
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Synchronous Buck Controller | |
BSC080N03MSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Me | |
BSC080N12LS G | INFINEON |
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逻辑电平 OptiMOS™ 3 功率 MOSFET 特别适用于 充电、 适配器 和 电信等 | |
BSC080P03LSG | INFINEON |
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OptiMOS™-P Power-Transistor | |
BSC080P03LSGAUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Met |