5秒后页面跳转
BSC0901NSIATMA1 PDF预览

BSC0901NSIATMA1

更新时间: 2024-09-25 14:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 583K
描述
Power Field-Effect Transistor, 28A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

BSC0901NSIATMA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F5
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:1.63
雪崩能效等级(Eas):45 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):28 A最大漏源导通电阻:0.0026 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F5
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):400 A表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSC0901NSIATMA1 数据手册

 浏览型号BSC0901NSIATMA1的Datasheet PDF文件第2页浏览型号BSC0901NSIATMA1的Datasheet PDF文件第3页浏览型号BSC0901NSIATMA1的Datasheet PDF文件第4页浏览型号BSC0901NSIATMA1的Datasheet PDF文件第5页浏览型号BSC0901NSIATMA1的Datasheet PDF文件第6页浏览型号BSC0901NSIATMA1的Datasheet PDF文件第7页 
BSC0901NSI  
OptiMOSTM Power-MOSFET  
Product Summary  
Features  
VDS  
30  
2
V
• Optimized SyncFET for high performance buck converter  
• Integrated monolithic Schottky-like diode  
• Very low on-resistance R DS(on) @ V GS=4.5 V  
• 100% avalanche tested  
RDS(on),max  
ID  
mW  
A
100  
28  
41  
QOSS  
nC  
nC  
QG(0V..10V)  
• Superior thermal resistance  
• N-channel  
• Qualified according to JEDEC1) for target applications  
• Pb-free lead plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
PG-TDSON-8  
Type  
Package  
Marking  
BSC0901NSI  
PG-TDSON-8  
0901NSI  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
V GS=10 V, T C=25 °C  
V GS=10 V, T C=100 °C  
Continuous drain current  
100  
92  
A
V GS=4.5 V, T C=25 °C  
100  
V GS=4.5 V,  
T C=100 °C  
81  
28  
V GS=10 V, T A=25 °C,  
R thJA=50 K/W2)  
Pulsed drain current3)  
I D,pulse  
I AS  
T C=25 °C  
400  
50  
Avalanche current, single pulse4)  
Avalanche energy, single pulse  
Gate source voltage  
T C=25 °C  
E AS  
V GS  
I D=50 A, R GS=25 W  
45  
mJ  
V
±20  
1) J-STD20 and JESD22  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
Rev. 2.2  
page 1  
2012-05-31  

与BSC0901NSIATMA1相关器件

型号 品牌 获取价格 描述 数据表
BSC0901NSIXT INFINEON

获取价格

暂无描述
BSC0902NS INFINEON

获取价格

n-Channel Power MOSFET
BSC0902NS_15 INFINEON

获取价格

Material Content Data Sheet
BSC0902NSATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 24A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
BSC0902NSI INFINEON

获取价格

Power Field-Effect Transistor, 23A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me
BSC0902NSI_15 INFINEON

获取价格

Material Content Data Sheet
BSC0902NSIATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 23A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me
BSC0904NSI INFINEON

获取价格

n-Channel Power MOSFET
BSC0904NSIATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 20A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Me
BSC0906NS INFINEON

获取价格

n-Channel Power MOSFET