品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | / | |
页数 | 文件大小 | 规格书 |
11页 | 971K | |
描述 | ||
Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC076N04ND | INFINEON |
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OptiMOS™ power transistor 40V | |
BSC076N06NS3 G | INFINEON |
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OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器 | |
BSC076N06NS3G | INFINEON |
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OptiMOS3 Power-Transistor | |
BSC076N06NS3GATMA1 | INFINEON |
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Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Me | |
BSC077N12NS3 G | INFINEON |
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120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能,适用于各种应用,支持实 | |
BSC077N12NS3G | INFINEON |
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OptiMOS3 Power-Transistor | |
BSC077N12NS3GATMA1 | INFINEON |
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Power Field-Effect Transistor, 13.4A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, | |
BSC077N12NS3GXT | INFINEON |
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Power Field-Effect Transistor, 13.4A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, | |
BSC079N03LSCGATMA1 | INFINEON |
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Power Field-Effect Transistor, 14A I(D), 30V, 0.0127ohm, 1-Element, N-Channel, Silicon, Me | |
BSC079N03S | INFINEON |
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OptiMOS 2 Power-Transistor |