型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSC0504NSIATMA1 | INFINEON |
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Power Field-Effect Transistor, 21A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Me | |
BSC050N03LS G | INFINEON |
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极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS™ 25V 成 | |
BSC050N03LSG | INFINEON |
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OptiMOSâ¢3 Power-MOSFET | |
BSC050N03LSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me | |
BSC050N03LSGXT | INFINEON |
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Power Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me | |
BSC050N03MSG | INFINEON |
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OptiMOS?3 M-Series Power-MOSFET | |
BSC050N03MSGATMA1 | INFINEON |
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Power Field-Effect Transistor, 16A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Me | |
BSC050N04LS G | INFINEON |
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OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和 | |
BSC050N04LSG | INFINEON |
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OptiMOS?3 Power-Transistor | |
BSC050N04LSGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 40V, 0.0072ohm, 1-Element, N-Channel, Silicon, Me |