BFP183

更新时间： 2024-11-10 22:27:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体放大器晶体管光电二极管
页数	文件大小	规格书
7页	64K
描述
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)

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BFP183 数据手册

BFP 183

NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at

collector currents from 2 mA to 30 mA

• f = 8 GHz

F = 1.2 dB at 900 MHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

Package

BFP 183

RHs

Q62702-F1382

1 = C 2 = E 3 = B 4 = E SOT-143

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

°C

Base current

Total power dissipation

tot

≤

76 °C

250

Junction temperature

Ambient temperature

Storage temperature

150

- 65 ... + 150

stg

Thermal Resistance

≤

Junction - soldering point

thJS

295

K/W

1) T is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group

Dec-13-1996

12 3 4 5 6 7

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BFP183 替代型号

型号	品牌	替代类型	描述	数据表
BFP193W	INFINEON	功能相似	NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broad
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BFR181W	INFINEON	功能相似	NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector curr

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