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BFR181W PDF预览

BFR181W

更新时间: 2024-02-10 21:31:48
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管
页数 文件大小 规格书
7页 60K
描述
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

BFR181W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-70
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.23
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.02 A基于收集器的最大容量:0.45 pF
集电极-发射极最大电压:12 V配置:SINGLE
最高频带:L BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.175 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):8000 MHzBase Number Matches:1

BFR181W 数据手册

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BFR 181W  
NPN Silicon RF Transistor  
• For low noise, high-gain broadband amplifiers at  
collector currents from 0.5 mA to 12mA  
f = 8GHz  
T
F = 1.45dB at 900MHz  
ESD: Electrostatic discharge sensitive device, observe handling precaution!  
Type  
Marking Ordering Code  
Pin Configuration  
Package  
BFR 181W RFs  
Q62702-F1491  
1 = B  
2 = E  
3 = C  
SOT-323  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
12  
20  
20  
2
V
CEO  
CES  
CBO  
EBO  
I
I
20  
2
mA  
mW  
°C  
C
Base current  
B
Total power dissipation  
P
tot  
T
90 °C  
175  
S
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
150  
j
- 65 ... + 150  
- 65 ... + 150  
A
stg  
Thermal Resistance  
1)  
Junction - soldering point  
R
thJS  
345  
K/W  
1) T is measured on the collector lead at the soldering point to the pcb.  
S
Semiconductor Group  
1
Dec-11-1996  

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